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8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS

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8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS

Name: 8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
Brand: ZMKJ
Price: 1 USD

Cheap 8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS for sale

Brand Name : ZMKJ

Model Number : 8inch sic wafers 4h-n

Certification : ROHS

Place of Origin : CHINA

MOQ : 1pcs

Price : by case

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 1-20pcs/month

Delivery Time : 3-6 months

Packaging Details : single wafer package in 100-grade cleaning room

Material : SiC single crystal

Grade : Production Grade

Delivery date : 3 months

Application : device maker polishing test MOS

Diameter : 200±0.5mm

MOQ : 1

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SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer 4H-N SIC ingots/200mm SiC Wafers 200mm SiC Wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), or carborundum, is a semiconductor containing silicon and carbon with the chemical formula SiC. SiC is used in semiconductor electronics devices operating at high temperatures, high voltages, or both. SiC is also one of the important LED components, it is a popular substrate for growing GaN devices and serves as a heat spreader in high-power LEDs.

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3	3.21 g/cm3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c~9.66	c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)	a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)	a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K	a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K
Band-gap	3.23 eV	3.02 eV
Break-Down Electrical Field	3-5×106V/cm	3-5×106V/cm
Saturation Drift Velocity	2.0×105m/s	2.0×105m/s

To overcome these challenges and obtain high quality 200mm SiC wafers,solutions are proposed:
In terms of 200mm seed crystal preparation, appropriate temperature field, flow field, and expanding assemblwere studied and designed to take into account crystal quality and expanding size; Starting with a 150mm SiCseed crystal, carry out seed crystal iteration to gradually expand the SiC crystal size until it reaches 200mm;Throuch multiple crystal growth and processing, gradually optimize the crystal quality in the crystal expandingarea, and improve the quality of 200mm seed crystals.
n terms of 200mm conductive crvstal and substrate preparation. research has optimized the temperature fieland flow field design for large size crystal growth, conduct 200mm conductive SiC crystal growth, and controldoping uniformity. After rough processing and shaping of the crystal, an 8-inch electrically conductive 4H-SiCingot with a standard diameter was obtained. After cutting, grinding, polishing, processing to obtain SiC 200mmwafers with a thickness of 525um or so.

8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS

SiC Application

Due to SiC physical and electronic properties, Silicon Carbide-based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs-based device.

Optoelectronic Devices

SiC-based devices are
low lattice mismatch fall-nitride epitaxial layers
high thermal conductivity
monitoring of combustion processes
all sorts of UV-detection
Due to SiC material properties, SiC-based electronics and devices can work in very hostile environments, which can work under high temperatures, high power, and high radiation conditions

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